Hitachi Power Semiconductor Device, (HPSD) and Sagar Semiconductors (Sagar Semi) have built and advanced a collaboration with the signing of a Memorandum of Understanding (MoU) to conduct joint-marketing for high power devices such as IGBTs and SiC, New Product Development (NPD), and technology transfer of high voltage diode.

This signing underscores a pivotal move towards fortifying India’s semiconductor landscape and contributing significantly to the nation’s ‘Make in India’ initiative.

The MoU, inked at Sagar Semiconductors’ headquarters in Hyderabad, marks a new era of partnership between two companies.

Present at the signing ceremony were Kedar Reddy, Managing Director of Sagar Semiconductors, and Hirotaka Wakamatsu, Head of Business Development for Hitachi Power Semiconductor Devices.

Kedar Reddy, MD, Sagar Semiconductors expressed his enthusiasm, stating, “This collaboration signifies a pivotal moment for the Indian semiconductor landscape. By localizing operations and nurturing NPD capabilities, we are taking tangible steps towards self-sufficiency, poised to make a transformative impact on the semiconductor ecosystem.”

Hirotaka Wakamatsu, Head of Business Development for Hitachi Power Semiconductor Devices expressed his belief in the Indian market, stating, “We are very bullish on the Indian semiconductor and power electronics market. We are happy to partner with Sagar Semiconductors to explore various initiatives for the Indian market. We believe our decades of experience combined with their local knowledge will be a winning combination.